SI9953DY |
RFQ for SI9953DY |
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| Product | Manufacturers | Pack | D/C |
| SI9953DY | - | SOIC-8 | 98+ |

|
Parameter |
Symbol |
Limit |
Unit | |
| Drain-Source Voltage |
VDS |
-20 |
V | |
| Gate-Source Voltage |
VGS |
±20 | ||
| Continuous Drain Current (TJ = 150)a | TA = 25 |
ID |
±2.3 |
A |
| TA = 70 |
±1.8 | |||
| Pulsed Drain Current |
IDM |
±10 | ||
| Continuous Source Current (Diode Conduction)a |
IS |
-1.7 | ||
| Maximum Power Dissipationa | TA = 25 |
PD |
2.0 |
W |
| TA = 70 |
1.3 | |||
| Operating Junction and Storage Temperature Range |
TJ, Tstg |
-55 to 150 |
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